CM200DU-24H三菱IGBT模塊,絕緣柵雙極型晶體管,是由BJT(雙極型三極管)和MOS(絕緣柵型場效應管)組成的復合全控型電壓驅動式功率半導體器件, 兼有MOSFET的高輸入阻抗和GTR的低導通壓降兩方面的優點。GTR飽和壓降低,載流密度大,但驅動電流較大;MOSFET驅動功率很小,開關速度快,但導通壓降大,載流密度小
北京京誠宏泰科技原裝正品現貨供應CM200DU-24H三菱IGBT模塊
MITSUBISHI IGBT MODULES
CM200DU-24H產品特點:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy Heat Sinking
CM200DU-24H產品參數:
VCES=1200V IC=200A
CM75DU-24H
CM100DU-24H
CM100DU-24NFH
CM100DU-34NF
CM150DU-34KA
CM150DU-24H
CM150DU-24F
CM150DU-24NFH
CM200DU-24H
CM200DU-12F
CM200DU-24NFH
CM200DU-34KA
CM300DU-24H
CM300DU-12F
CM300DU-24NFH
CM400DU-24F
CM400DU-12H
CM400DU-12E
CM400DU-24FH
CM400DU-34KA
CM600DU-24F
CM600DU-24NFH
CM900DU-24NF
CM1000DU-34NF
CM1400DU-24NF